Memristive behaviour of electrodeposited bismuth selenide

Abstract We demonstrate memristive functions of the room temperature thermoelectric material Bi-Se fabricated by electrochemical deposition in combination with active electrode Ag-based contacts. present microfabrication steps for creating polymer molds growth compact films. The electrical measurements show clear forming-free resistive switching behaviour electrochemically deposited while dependent point to Schottky and space-charge-limited-current conduction mechanisms. For envisioned memristors a device we can conclude that electrodeposition is viable method produce silver-chalcogenide based non-volatile co-integration zero power sensors.